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SSM3K303T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K303T
High Speed Switching Applications
• 4 V drive • Low ON-resistance:
Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
30
V
Gate–source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
2.9 A
5.8
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
SSM3K303T Datasheet
