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SSM3K309T
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K309T
○ Power Management Switch Applications ○ High-Current Switching Applications
• 1.8V drive • Low on-resistance : Ron = 47mΩ (max) (@VGS = 1.8V)
: Ron = 35mΩ (max) (@VGS = 2.5V) : Ron = 31mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
20
V
Gate–source voltage
VGSS
±12
V
Drain current
DC
ID
Pulse
IDP
4.7 A
9.4
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3K309T Datasheet
