SSM5H01TU datasheet by Toshiba.
| Part number | SSM5H01TU |
|---|---|
| Datasheet | SSM5H01TU-ToshibaSemiconductor.pdf |
| File Size | 186.29 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter bined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) Ratings (Ta = 25°C) MOSFET, DIODE MON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C °C Note:.
| Part Number | Description |
|---|---|
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H08TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H12TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H14F | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H16TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
