SSM5H06FE datasheet by Toshiba.
| Part number | SSM5H06FE |
|---|---|
| Datasheet | SSM5H06FE-ToshibaSemiconductor.pdf |
| File Size | 147.74 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter bined Nch MOSFET and Schottky Diode in one Package. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
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|---|---|
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| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H08TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H12TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H14F | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H16TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
