SSM5H08TU datasheet by Toshiba.
| Part number | SSM5H08TU |
|---|---|
| Datasheet | SSM5H08TU-ToshibaSemiconductor.pdf |
| File Size | 260.07 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5H08TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Nch MOSFET and schottky diode bined in one package Low RDS (ON) and low VF Unit: 7 mg (typ.) Ratings (Ta = 25°C) MOSFET, DIODE MON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C °C Note: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| SSM5H01TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H12TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H14F | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H16TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
