SSM5H07TU

SSM5H07TU is Silicon Epitaxial Schottky Barrier Diode manufactured by Toshiba.

  • Part: SSM5H07TU
  • Manufacturer: Toshiba
  • Size: 260.91 KB
Download SSM5H07TU Datasheet PDF
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SSM5H07TU Description

SSM5H07TU Silicon N Channel MOS Type (π-MOSⅣ)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Nch MOSFET and schottky diode bined in one package Low RDS (ON) and low VF Unit: 7 mg (typ.) Ratings (Ta = 25°C) MOSFET, DIODE MON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~85 Unit °C °C Note: Using continuously under heavy loads (e.g.