SSM5H11TU Description
SSM5H11TU Silicon N Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications 4.0-V drive bined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to 125 Unit °C Note:.