SSM5H14F datasheet by Toshiba.
| Part number | SSM5H14F |
|---|---|
| Datasheet | SSM5H14F-ToshibaSemiconductor.pdf |
| File Size | 305.61 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack 1.8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package. Low RDS (ON) and Low VF Unit: mm Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDSS VGSS ID IDP...
| Part Number | Description |
|---|---|
| SSM5H11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H12TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H16TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H01TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H08TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
