SSM5H12TU datasheet by Toshiba.
| Part number | SSM5H12TU |
|---|---|
| Datasheet | SSM5H12TU-ToshibaSemiconductor.pdf |
| File Size | 178.50 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V drive bined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: 7 mg (typ.) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to 125 Unit °C Note:.
| Part Number | Description |
|---|---|
| SSM5H11TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H14F | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H16TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H01TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H03TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H05TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H06FE | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H07TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5H08TU | Silicon Epitaxial Schottky Barrier Diode |
| SSM5G01TU | MOSFET/Diode |
