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SSM6N39TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N39TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • • 1.5-V drive N-ch 2-in-1 Low ON-resistance: Unit: mm
2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05
Ron = 247mΩ (max) (@VGS = 1.5 V) Ron = 190mΩ (max) (@VGS = 1.8 V) Ron = 139mΩ (max) (@VGS = 2.5 V) Ron = 119mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ± 10 1.6 3.2 500 150 −55 to 150 Unit V V A mW °C °C
0.7±0.05
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N39TU Datasheet
