SSM6N7002AFU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications Analog Switch Applications
Unit: mm
- - Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V)
2.1±0.1
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
0.65 0.65 2.0±0.2 1.3±0.1
1.25±0.1
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse
Symbol VDS VGSS ID IDP PD (Note) Tch Tstg
Rating 60 ± 20 200 800 300 150
- 55~150
Unit V V
1 2 3
6 5 4
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range m W °C °C
0.9±0.1 m A
Note: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm × 6)
0.4 mm 0.8 mm
JEDEC 1.SOURCE1 JEITA 2.GATE1 3.DRAIN2 TOSHIBA
― 4.SOURCE2 ― 5.GATE2 6.DRAIN1 2-2J1C
US6 0.012 g (typ.) Weight:
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
1 2 3 1
Q1 Q2
Handling...
