The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM6N7002BFE
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
SSM6N7002BFE
High-Speed Switching Applications
Analog Switch Applications
Unit: mm
1.6±0.05
• Small package • Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V)
: RDS(ON) = 2.6 Ω (max) (@VGS = 5 V) : RDS(ON) = 2.1 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
1.6±0.05 1.0±0.05 0.5 0.5
1.2±0.05
1
6
2
5
3
4
0.2±0.05
0.12±0.05
0.55±0.05
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
200
mA
IDP
800
Power dissipation
PD (Note 1)
150
mW
1.SOURCE1 4.SOURCE2
2.GATE1
5.
SSM6N7002BFE Datasheet
