The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM6N7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002FU
High Speed Switching Applications Analog Switch Applications
• Small package • Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V)
: Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
60
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC Pulse
ID
200
mA
IDP
800
Drain power dissipation (Ta = 25°C)
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM6N7002FU Datasheet
