SSM6N7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications Analog Switch Applications
- Small package
- Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V)
: Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 mon)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
VGSS
± 20
Drain current
DC Pulse
200 m A
Drain power dissipation (Ta = 25°C)
PD (Note 1)
300 m W
Channel temperature
Tch
°C
Storage temperature range
Tstg
- 55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please...
