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SSM6N7002FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N7002FU
High Speed Switching Applications Analog Switch Applications
• Small package • Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V)
: Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
60
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC Pulse
ID
200
mA
IDP
800
Drain power dissipation (Ta = 25°C)
PD (Note 1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM6N7002FU Datasheet
