SSM6N7002BFU
SSM6N7002BFU w w w . D a t a S h e e t 4 U . c o m
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
High-Speed Switching Applications Analog Switch Applications
Unit: mm
- - Small package Low ON-resistance : RDS(ON) = 3.3 Ω (max) (@VGS = 4.5 V)
2.0±0.2 +0.1 0.2 -0.05 0.15±0.05 1.3±0.1 2.1±0.1 1.25±0.1
: RDS(ON) = 2.1 Ω (max) (@VGS = 10 V)
: RDS(ON) = 2.6 Ω (max) (@VGS = 5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ± 20 200 800 300 150
- 55 to 150 Unit V V m A m W °C °C
0.9±0.1
US6
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
1.SOURCE1 4.SOURCE2 2.GATE1 5.GATE2 3.DRAIN2 6.DRAIN1
Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may...
