SSM6P54TU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications - 1.5 V drive - Suitable for high-density mounting due to pact package - Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V) : Ron = 350 mΩ (max) (@ VGS = -1.8 V) : Ron = 555 mΩ (max) (@ VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse -20 VGSS ±8 -1.2 A -2.4 PD(Note 1) 500 m W Tch °C Tstg - 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Unit : mm 2.1±0.1 1.7±0.1 +0.1...