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SSM6P54TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P54TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V)
: Ron = 350 mΩ (max) (@ VGS = -1.8 V) : Ron = 555 mΩ (max) (@ VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
Drain power dissipation Channel temperature Storage temperature range
DC Pulse
VDS
-20
V
VGSS
±8
V
ID
-1.2 A
IDP
-2.4
PD(Note 1)
500
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM6P54TU Datasheet
