TH58NVG1S3AFT05 is TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS manufactured by Toshiba.
| Part Number | Description |
|---|---|
| TH58NVG4S0FTA20 | 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG5S0FTA20 | 32-GBIT (4G x 8 BIT) CMOS NAND E2PROM |
| TH58NVG5S0FTAK0 | 32 GBIT (4G x 8 BIT) CMOS NAND E2PROM |
| TH58100FT | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TH58100FTI | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for mand inputs.
