TH58NVG1S3AFT05 datasheet by Toshiba.
| Part number | TH58NVG1S3AFT05 |
|---|---|
| Datasheet | TH58NVG1S3AFT05_ToshibaSemiconductor.pdf |
| File Size | 368.77 KB |
| Manufacturer | Toshiba |
| Description | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for mand inputs.
| Part Number | Description |
|---|---|
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| TH50VSF2582AASB | SRAM AND FLASH MEMORY MIXED MULTI-CHIP |
