TH58NVG1S3AFT05 - TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Product Overview

Toshiba Semiconductor

Datasheet Details

Part number	TH58NVG1S3AFT05
Manufacturer	Toshiba Semiconductor
File Size	368.77 KB
Description	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TH58NVG1S3AFT05 Datasheet
Additional preview pages of the TH58NVG1S3AFT05 datasheet.

Product details

Description

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks.

Features

x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply x Program/Erase Cycles x Access time Cell array to register Serial Read Cycle x Operating current Read (50 ns cycle) Program (avg. ) Erase (avg. ) Standby x Package TSOP I 48-P-1220-0.50 (Weight : 0.53 g typ. ) VCC 2.7 V to 3.6 V 1E5 Cycles(With.

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Published: Oct 6, 2005 |