TK4Q60DA
TK4Q60DA is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 m A)
3. Packaging and Internal Circuit
New PW-Mold2
1: Gate 2: Drain (heatsink) 3: Source
2012-10-16
Rev.2.0
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
(Note 2)
132 m J
Avalanche current
Repetitive avalanche energy
(Note 3)
8 m J
Channel temperature
Tch...
