Datasheet4U Logo Datasheet4U.com

TK70A06J1 - N-Channel MOSFET

Key Features

  • damage or serious publ.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK70A06J1 Switching Regulator Application • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement-mode: Vth = 1.1~2.