The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK70J04J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅢ)
TK70J04J3
Motor Drive Application
Unit: mm
z Low drain-source ON resistance: RDS (ON) = 3.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.5 to 3.