TK70J04J3
TK70J04J3 is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U- MOSⅢ)
Motor Drive Application
Unit: mm z Low drain-source ON resistance: RDS (ON) = 3.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ)
Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Symbol
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
Rating
Unit
±20
528 m J
15 m J
°C
- 55~175
°C
1: Gate 2: Drain (Heat Sink) 3: Source
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1B...
