TK70D06J1 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) Switching Regulator Application - High-Speed switching - Small gate charge: Qg = 87 n C (typ.) - Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) - High forward transfer admittance: |Yfs| = 80 S (typ.) - Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) - Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD IAR EAR Tch Tstg 60 60 ±20 70 280 140 70 10.3 150 - 55~150 W m J A m J °C °C JEDEC - JEITA - TOSHIBA 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate,...