TK75A06K3 - MOSFETs

Product Overview

Toshiba Semiconductor

Part number	TK75A06K3
Manufacturer	Toshiba Semiconductor
File Size	216.17 KB
Description	MOSFETs
Datasheet	TK75A06K3 Datasheet
Additional preview pages of the TK75A06K3 datasheet.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.5 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche c.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |