The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC6108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS )
www.DataSheet4U.com
TPC6108
Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.4 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-model: Vth = −0.8 to −2.
TPC6108 Datasheet
