TPC6130 Datasheet MOSFETs

Manufacturer: Toshiba

Datasheet Details

TPC6130 MOSFETs Silicon P-Channel MOS (U-MOS) TPC6130 1.

Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2.

(1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 86 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 5, 6: Drain 3: Gate 4: Source VS-6 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pul.