TPC8009-H
Key Features
- Small footprint due to small and thin package High speed switching Small gate charge: Qg = 29 nC (typ.) Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
- on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of .. manufacture: January to December are denoted by letters A to L respectively.)
