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TPC8009-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8009-H
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
· · · · · · · Small footprint due to small and thin package High speed switching Small gate charge: Qg = 29 nC (typ.) Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b)
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TPC8009-H Datasheet
