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TPC8110
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC8110
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −40 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −40 −40 ±20 −8 −32 1.9 1.0 59.4 −8 0.
TPC8110 Datasheet
