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TPC8114 www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPC8114
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −18 −72 1.9 1.0 211 −18 0.
TPC8114 Datasheet
