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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8113
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −11 −44 1.9 1.0 31.5 −11 0.
TPC8113 Datasheet
