Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
- -
- -
- Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 30 V) Enhancement-mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating
- 30
- 30 ±20
- 11
-...