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TPC8120
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8120
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) • High forward transfer admittance: |Yfs| =80 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.
TPC8120 Datasheet
