TPC8120
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
- Small footprint due to small and thin package
- Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.)
- High forward transfer admittance: |Yfs| =80 S (typ.)
- Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 30 V)
- Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a)
Drain power dissipation (t = 10 s) (Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS IAR EAR Tch Tstg
- 30
- 30
-...
