TPC8123
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
..
Lithium Ion Battery Applications Power Management Switch Applications
- -
- -
- Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 30 V) Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 0.5 m A) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating
- 30
- 30
- 25/+20
- 11
- 44 1.9 1.0 79
- 11 0.04 150
- 55 to 150 Unit V V V A
Pulse (Note 1)
JEDEC
W W m J A m J °C °C
⎯ ⎯ 2-6J1B
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current (Note 1)
JEITA TOSHIBA
Weight: 0.080 g...
