TPC8124
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
Lithium Ion Battery Applications Power Management Switch Applications
Unit: mm
- Small footprint due to small and thin package
- Low drain-source ON-resistance: RDS (ON) = 6.1 mΩ (typ.)
- Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 40 V)
- Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 0.5m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (t = 10 s) (Note 2a)
Drain power dissipation (t = 10 s) (Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
(Note 1)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS IAR Tch Tstg
- 40
- 40
- 25/+20
- 12...
