The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC8121
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS V)
TPC8121
Notebook PC Applications Lithium Ion Battery Applications Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.
TPC8121 Datasheet
