Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Lithium-Ion Secondary Batteries
- Power Management Switches
2. Features
(1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4....