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TPC8301
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
TPC8301
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 95 mΩ (typ.) High forward transfer admittance : |Yfs| = 4 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −3.5 −14 1.5 W 1.0 0.75 W 0.45 16 −3.5 0.
TPC8301 Datasheet
