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TPC8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
TPC8303
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 7 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating −30 −30 ±20 −4.5 −18 1.5 W PD(2) 1.
TPC8303 Datasheet
