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TPC8305
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
TPC8305
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.) High forward transfer admittance : |Yfs| = 12 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −20 V) Enhancement−mode : Vth = −0.5~ −1.2 V (VDS = −10 V, ID = −1mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating −20 −20 ±12 −5 −20 1.5 W PD(2) 1.
TPC8305 Datasheet
