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TPC8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSVI)
2
TPC8302
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
2.5 V Gate drive Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.) High forward transfer admittance: |Yfs| = 5 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement−mode: Vth = −0.5~ −1.1 V (VDS = −10 V, ID = −200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD 2) EAS IAR EAR Tch Tstg Rating −20 −20 ±12 −3.5 −14 1.5 W 1.0 0.75 W 0.45 16 −3.5 0.
TPC8302 Datasheet
