2SA594 - SILICON PNP TRANSISTOR

Toshiba

Key Features

. High Transition Frequency; fT = 200MHz (TYP. ) . Low Output Capacitance; Cob = 3.5 pF (Typ. ) . Low Saturation Voltage; VC E(sat) = -0.3V (Max. ) at Ic = -100mA , I B = -10mA . Complementary to 2SC594.

2SA594 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA594
Manufacturer	Toshiba
File Size	101.04 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SA594 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm <£a3 9MAX FEATURES: . High Transition Frequency; fT = 200MHz (TYP.) . Low Output Capacitance; Cob = 3.5 pF (Typ.) . Low Saturation Voltage; VC E(sat) = -0.3V (Max.) at Ic = -100mA , I B = -10mA . Complementary to 2SC594 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Ta=25°C Power Dissipation Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO V EBO ic IB PC T .i T stg RATING -60 -45 -5 -200 -50 750 5 175 -65-175 UNIT V V V mA mA mW W °C °C 1. EMITTER Z BASE 3.