Datasheet Summary
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm <£a3 9MAX
Features
:
. High Transition Frequency; fT = 200MHz (TYP.) . Low Output Capacitance; Cob = 3.5 pF (Typ.) . Low Saturation Voltage; VC E(sat) = -0.3V (Max.) at Ic = -100mA , I B = -10mA . plementary to 2SC594
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Base Current
Collector
Ta=25°C
Power Dissipation Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO v CEO V EBO ic IB
.i
T stg
RATING -60 -45 -5
-200...