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SILICON NPN EPITAXIAL PLANAR TYPE
)
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE)
FEATURES
. Specified 28V, 28MHz Characteristics : Output Power : P o =40Wp Ep : Minimum Gain : Gp e =16dB : Efficiency : >7c = 40%(Min. : Intermodulation Distortion : IMD=-30dB(Max.
Unit in mm
012.7 ±Q5
ci cS +1 -H
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO v CEO v EBO ic
?C
T
J
T stg
RATING 65 35
4
7
80
UNIT V V V A W
175
-65-175
°C °c
' ' ;
;
: !
l
18.4±ai5
1f
1. EMITTER 2. BASE a EMITTER 4. COLLECTOR
JEDEC
EIAJ
TOSHIBA
2-13B1A
Weight : 5.
2SC1763 Datasheet
