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SILICON NPN EPITAXIAL PLANAR TYPE
2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (20V SUPPLY VOLTAGE USE)
FEATURES Specified 28V, 28MHz Characteristics Output Power : P o =80Wp Ep Minimum Gain : Gp e=14.5dB Efficiency : ? c=40%(Min. Intermodulation Distortion : IMD=-30dB(Max.
Unit in mm
MAXIMUM RATI NGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO Vebo ic
PC
T
j
Tstg
RATING 65
35 4
12
140
175
-65 -175
UNIT V V V A
W
°C °c
1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR
TOSHIBA
2-13B1A
Weight : 5.
2SC1764 Datasheet
