2SC522 - SILICON NPN TRANSISTOR

Toshiba

Key Features

High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524).
Useful attachment for Heat sink.
Various Uses for Medium Power : I C=1.5A (Max. ), P C=10W (Max. ) gfe.39MAX SZfe.5MAX Unit in mm 00.45 il 11 l - . ^. ,.

2SC522 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC522
Manufacturer	Toshiba
File Size	122.23 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC522 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SC5200N	NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC524, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : I C=1.5A (Max.), P C=10W (Max.) gfe.39MAX SZfe.5MAX Unit in mm 00.45 il 11 l - . ^. , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SC522 2SC524 Collector- Emitter Voltage Emitter-Base Voltage 2SC522 2SC524 Collector Current Base Current Collector Power Dissipation (Tv=?s°r) Junction Temperature Storage Temperature Range SYMBOL VCBO v CE0 VEBO ic IB PC Tj T stg RATING 140 100 100 60 5 1.5 300 10 175 -65VL75 UNIT V V V A mA W °C °C 1. EMITTER 2. BASE 3.