2SD1432 - NPN Transistor

Toshiba

Key Features

. High Voltage : VCBO=1500V . Low Saturation Voltage . High Speed : v CE(sat)=5V (Max. ) (I C =5A, : tf=1.0^s (Max. ) . Glass Passivated Collector-Base Junction I B=1A) Unit in ram 1S0MAX. 03.6±CL2.

2SD1432 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD1432
Manufacturer	Toshiba
File Size	41.02 KB
Description	NPN Transistor
Datasheet	2SD1432 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBO=1500V . Low Saturation Voltage . High Speed : v CE(sat)=5V (Max.) (I C =5A, : tf=1.0^s (Max.) . Glass Passivated Collector-Base Junction I B=1A) Unit in ram 1S0MAX. 03.6±CL2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) SYMBOL vCBO v CEO VEBO ic IE RATING 1500 600 -6 80 UNIT 1. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER Junction Temperature 150 Storage Temperature Range stg ELECTRICAL CHARACTERISTICS (Ta=25°C) -55-150 TOSHIBA 2-16D1A Weight : 5.2g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.