2SD2525 - Silicon NPN Triple Diffused Type Transistor

Toshiba

Datasheet Details

Part number	2SD2525
Manufacturer	Toshiba
File Size	128.01 KB
Description	Silicon NPN Triple Diffused Type Transistor
Datasheet	2SD2525 Datasheet

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2525 2SD2525 Audio Frequency Power Amplifier Applications Unit: mm • High DC current gain: 100 (min) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2 A, IB = 0.2 A) • Complementary to 2SB1640 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.5 A Collector power dissipation Junction temperature Storage temperature range PC 1.8 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g.