Toshiba 2SJ104
P-Channel MOSFET
| Part No. | 2SJ104 |
|---|---|
| Datasheet | 2SJ104 Download |
| Manufacturer |  Toshiba |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
2SJ104 Unit: mm● High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
● Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA)
● Complimentary to 2SK364
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 400 125 -55~125 Unit V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS V (BR) GDS VGS = 25 V, VDS = 0 VDS = 0, IG = 100 mA ¾ ¾ 1.0 nA 25 ¾ ¾ V IDSS VDS = -10 V, VGS = 0 (Note 1) -2.6 ¾ -20 mA VGS (OFF) VDS = -10 V, ID = -0.1 mA 0.2 ¾ 2.0 V VDS = -10 V, VGS = 0, f = 1 kHz ïYfsï 12 30 ¾ mS (Note 2) Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 1...
