Toshiba 2SJ107
P-Channel MOSFET
| Part No. | 2SJ107 |
|---|---|
| Datasheet | 2SJ107 Download |
| Manufacturer |  Toshiba |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
2SJ107 Unit: mm● High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
● Low RDS (ON): RDS (ON) = 40 Ω (typ.)
● Small package
● Complementary to 2SK366
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg 25 −10 200 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
