Toshiba 2SJ105
P-Channel MOSFET
| Part No. | 2SJ105 |
|---|---|
| Datasheet | 2SJ105 Download |
| Manufacturer |  Toshiba |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
2SJ105 Unit: mm● High breakdown voltage: VGDS = 50 V
● High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
● Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
● Complimentary to 2SK330
● Small package
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 50 -10 200 125 -55~125 Unit V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1B Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance IGSS V (BR) GDS VGS = 30 V, VDS = 0 VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) VDS = -10 V, ID = -0.1 mA ïYfsï VDS = -10 V, VGS = 0, f = 1 kHz RDS (ON) Ciss Crss VDS = -10 mV, VGS = 0 IDSS = -5 mA VDS = -10 V, VGS = 0, f = 1 MHz VDG = -10 V, ID = 0, f = 1 MHz Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA Min Typ.
