Toshiba 2SJ108
P-Channel MOSFET
| Part No. | 2SJ108 |
|---|---|
| Datasheet | 2SJ108 Download |
| Manufacturer |  Toshiba |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● Recommended for first stages of EQ amplifiers and MC head amplifiers.
● High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA)
● Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz)
● High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
● Complementary to 2SK370
● Small package
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 200 125 -55~125ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Unit V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS = 25 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 mA IDSS (Note) VDS = -10 V, VGS = 0 VGS (OFF) ïYfsï Ciss Crss NF (1) VDS...
