• Part: 2SK419
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 44.11 KB
Download 2SK419 Datasheet PDF
Toshiba
2SK419
FEATURES . High Brakdwon Voltage : V(br)dss=450V . High Forward Transfer Admittance : |Yf s |=1.2S (Typ.) . Low Leakage Current : l GSS =:t100n A(Max. ) @ Vgs=±20V . Enhancement-Mode l DSS=lm A(Max.) @ VDS=450V : V t h=l - 5 ~ 3. 5V @ l D=lm A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX Gate-Source Voltage vgss ±20 Drain Current Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID idp Pd Teh [stg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL -55-150 1. GATE 2. DRAIN (HEAT SINK) a SOURCE JEDEC EIAJ TOSHIBA Weight : 2.0g 2-10K1B TEST CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current ^SS VGS=±20V, VDS =0 - - ±100 n A Drain Cut-off Current IDSS VDS=450V, VGS=0 -...