2SK419 - Silicon N-Channel MOSFET

Toshiba

Key Features

. High Brakdwon Voltage : V(br)dss=450V . High Forward Transfer Admittance : |Yf s |=1.2S (Typ. ) . Low Leakage Current : lGSS =:t100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max. ) @ VDS=450V : V t h=l.
5 ~ 3. 5V @ lD=lmA.

2SK419 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK419
Manufacturer	Toshiba
File Size	44.11 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK419 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON N CHANNEL MPS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10. 3 MAX. FEATURES . High Brakdwon Voltage : V(br)dss=450V . High Forward Transfer Admittance : |Yf s |=1.2S (Typ.) . Low Leakage Current : lGSS =:t100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VDS=450V : V t h=l • 5 ~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSX 450 Gate-Source Voltage vgss ±20 Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range ID idp Pd Teh [stg_ ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL 50 150 -55-150 1. GATE 2.