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MG100Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG100Q2YS65H
High Power & High Speed Switching Applications
Unit: mm
· · ·
High input impedance Enhancement-mode The electrodes are isolated from case.
Equivalent Circuit
E1 E2
C1
E2
G1 E1/C2
G2
JEDEC JEITA TOSHIBA Weight: 255 g (typ.)
― ― 2-95A4A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Rating 1200 ±20 100 200 100 200 690 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A
Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque
A W °C °C V N▪m
1
2002-10-04
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MG100Q2YS65H Datasheet
