| Part number | MG25J1BS11 |
|---|---|
| Datasheet | MG25J1BS11_ToshibaSemiconductor.pdf |
| File Size | 364.92 KB |
| Manufacturer | Toshiba |
| Description | Silicon N - Channel IGBT |
|
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TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
| Part Number | Description |
|---|---|
| MG25Q1BS11 | Silicon N - Channel IGBT |
| MG25Q2YS40 | Silicon N Channel IGBT GTR Module |
| MG25Q6ES42 | Silicon N Channel IGBT GTR Module |
| MG25Q6ES50 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
| MG25Q6ES50A | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
| MG25Q6ES51 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
| MG25Q6ES51A | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
| MG200H1AL1 | DARLINGTON POWER MODULE |
| MG200J2YS50 | Silicon N Channel IGBT GTR Module |
| MG200M1UK1 | GTR Module |
